Presentation Description: Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC MOSFETs) have emerged as key components in power electronics, revolutionizing various applications due to their superior performance characteristics. SiC MOSFETs exhibit remarkable properties such as high breakdown voltage, low on-state resistance, and excellent thermal conductivity, making them ideal candidates for power switching devices in high-frequency and high-temperature environments. The ever-growing demand for efficient and reliable power electronic systems in industries such as electric vehicles, renewable energy, and industrial automation has intensified the need for a comprehensive analysis of SiC MOSFETs. This presentation delves into the static performance of various SiC MOSFETs to gain a holistic understanding of their merits. This analysis is realized under identical test conditions which is rarely the case if one tries to compare performance based on information from device datasheets. The comparative analysis involves assessing key metrics such as on-state resistance, drain-to-source voltage, threshold voltage, breakdown voltage, leakage currents, etc. under varying operating conditions. Performance tests are conducted for various test temperatures (from -55°C to 175°C) and in accordance with JEDEC norms and standards such as JESD 24 and JEP 183. One of the major highlights observed is that SiC devices may compete in performance, if used in their optimal mode or under specific conditions as identified by the performance test, over various temperature ranges…
