Presentation Description: This talk will introduce three-phase integrated GaN IPM technology for motor drive systems. The motor inverter designs using different power switch technologies, MOSFETs, IGBTs, and GaN FETs are compared. Integrating the gate drivers and GaN FETs in one package improves the inverter design parameters. The theoretical analysis and measurement results are presented to demonstrate high power efficiency and power density. The goal is to help designers maximize motor-drive performance by understanding the benefits of three-phase GaN IPM and the design considerations of motor inverter design.
