Presentation Description: This paper presents the implementation of the Silicon Carbide (SiC) Junction Field-Effect Transistor (JFET) for linear mode applications, including pre-charge, current limiting, and active discharge. Known for the high voltage and current handling capability, its robustness and thermal stability, SiC JFET offers significant advantages compare with other components. The energy storage elements can be pre-charged safely with limited inrush current by leveraging wide range of voltage and gate control tolerance, the charging current and time can be well balanced by tuning of the source feedback gain. For current limiting application, a simple feedback mechanism using a current sensing resistor and gate drive circuitry regulate JFET’s conduction to protect the load or downstream circuitry. The normally-On nature of JFET has advantage to functional safety required active discharge application, which is achieved by either simple resistor and Zener diode circuit or constant current close loop control.
Effective implementation of linear mode application requires consideration of Safety Operation Area (SOA) and thermal stability range.
