Presentation Description: This paper studies the benefits of connecting in parallel multiple units of the new smart discrete GaN HEMT with current sense. Hardware experiment of 400 V 6 A steady-state operation shows even distribution of current, temperature, and accurate matching of the total current sense output signals with total drain current. Parallel connection with one GaN HEMT off shows no need for additional blocking diode to block the CS (current sense) pin from sinking current which allows simpler schematics.
