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Industry Sessions

IS05.5 - Paralleling of 3x GaN FETs to 30 kW and Beyond

Tuesday, March 18, 2025
10:40 AM – 11:05 AM ET
Location: Level Four, A403
Presentation Description: GaN power devices enable improved efficiency in several consumer applications and are penetrating many markets, including fast chargers and power supplies. The next step for GaN is to enter higher-power applications, including industrial and automotive markets. As GaN enters into higher-power applications, paralleling multiple devices is key to increasing output power. In this talk, we will show the first demonstration of 3 GaN FETs connected in in parallel to achieve an output power of 30 kW. The devices are 650-V D-mode GaN HEMTs stacked with normally-off low-voltage silicon FETs. The devices are assembled in TO-247-3L, and have an on-state resistance of 15 mΩ at room temperature. The devices were tested in a 240V:400V boost converter circuit with a totla of 6 GaN Fets ( 3x on the low-side, 3x on the high-side) and were operated in hard-switch mode at a frequency of 30 kHz. Waveforms show well behaved switching, with synchronous turn-on and turn-off and uniformly distributed current, indicating balanced capacitance charge and discharge during switching and good current spreading during on-state. We achieved a peak efficiency of more than 99.3% @ 7kW output power. At peak power of 30kW, the junction temperature is below 120C for all switches. Immunity against GaN process variation will be thoroughly discussed.