Presentation Description: This talk will provide an overview of how to prevent oscillation phenomena of SiC MOSFETs connected in parallel. Device parameter difference in Vth or Ron and stray inductance imbalance can cause oscillation. This talk provides an insight how to suppress the oscillation between SiC MOSFETs. We measured whether oscillation occurs during switching at various voltages, currents, and gate resistances in a circuit with MOSFETs connected in parallel. We developed a simulation model and demonstrated that it is possible to predict the oscillation phenomena. In the presentation, we will discuss the design parameters effective for suppressing oscillation and their trade-off relationship with performance.
.jpg "LIZHONG ZHOU (he/him/his) photo")