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Industry Sessions

IS11.5 - Industry’s first stackable boost converter with integrated GaN FETs

Wednesday, March 19, 2025
10:40 AM – 11:05 AM ET
Location: Level Four, A403
Presentation Description: Introducing industry's first stackable boost converter with integrated gallium nitride (GaN) field-effect transistors (FETs) for high power applications. With two GaN FETs, a GaN-optimized boost controller + gate driver and a bootstrap capacitor, all integrated into a multi-chip module on a routable lead frame package, LMG5126x achieves 60 % less power dissipation compared to existing silicon boost controller solutions, reaching 240W output power without using a heat sink. Due to the high level of integration and small GaN FET size, solution size can be shrunk by more than half while the printed circuit board (PCB) layout gets significantly easier as the critical power stage layout is already taken care of within the module.