Presentation Description: GaN transistors can be made normally-on (D-mode) or normally-off (E-mode). In this presentation we examine the relative merits of the two approaches and study how best to apply the right technology to the right application space. Considered are applications calling for low-voltage (40V to 150V) and high-voltage (600-700V) ratings, as well as current ratings in the range of 10A to 100A, per FET. We identify the differing fundamental device characteristics, correlate these differing characteristics to differing performance metrics, and finally draw conclusions regarding how best to apply each.
