Presentation Description: ZVS losses are estimated using some characterization methods, which highlight the differences in behavior of GaN transistors. However, all these losses are still misunderstood, and it is complex to compare several transistors with these results. Therefore, a test board has been designed to measure losses for a real applicative case in ZVS. Using calorimetric and electrical measurement, total ZVS losses and conduction losses can be assessed in a real time at a chosen operating point. This Active ZVS Calorimetric (AZC) method is useful and relevant to compare GaN transistors behavior in real conditions and discern some differences despite similar data (RDSon, Coss) in the datasheet. The aim is to find the more suitable transistor for a given ZVS operating condition.
