Presentation Description: This presentation describes a simplified approach for parallel operation of Si IGBTs and SiC MOSFETs for automotive traction inverter applications. The innovation of this development resides in using a single channel gate driver and therefore simultaneous switching. To achieve a safe and near optimal operation, special requirements must be fulfilled by each technology (Si and SiC) to enable balanced current sharing. The theory behind this concept is validated by measurements using paired EDT3 IGBT/Diode chips with CoolSiCTM SiC MOSFETs mounted on a HybridPACKTM Drive B6 prototype. Double pulse measurements confirm high switching speed with smooth switching transients that in turn provide a path for optimized EMC performance. Finally, thermal IR testing demonstrates balanced and safe current sharing under both, light and full load operational conditions.
