Presentation Description: This presentation offers a detailed exploration of the challenges in measuring Wide-Bandgap (WBGT) power devices, illustrated with practical examples. It covers the key measurement methods, equipment, and probes necessary for accurately capturing all relevant signals.
Energy conversion, from generation to consumption, involves multiple transformations, each with unique challenges. As the demand for efficient energy transmission grows, new semiconductor technologies like Gallium Nitride (GaN) and Silicon Carbide (SiC) are being developed to meet these needs. These Wide-Bandgap (WBGT) technologies provide higher switching frequencies, reduced power losses, and enhanced transmission capabilities.
However, these advancements also introduce new challenges in measurement. This session will delve into the measurement techniques and best practices essential for characterizing transistor switching circuits, including critical current and voltage measurements on the high-side transistor of a WBGT power system and the calculation of power losses.
The technical specifications of measurement equipment are crucial in addressing these challenges. Instruments like differential high-voltage probes with high common-mode rejection (CMRR) and high bandwidth are vital for tasks such as gate-source voltage and shunt current measurements at high-side switches. De-skewing voltage and current probes to minimize time offsets is also strongly recommended for accurate power calculations.
This presentation not only outlines these measurement challenges but also highlights the impact of parasitic effects and provides solutions with the appropriate instruments and best practices.
