D10.9 - Low Interwinding Capacitance Design for PCB-Winding based Transformer in Self-Powered Gate Drive Power Supply for High-Voltage SiC MOSFET

Thursday, March 20, 2025

11:30 AM – 1:30 PM ET

Location: Level One, Hall A3

Technical Dialogue Presenter(s)

Yuan Zhou (he/him/his)

Huazhong University of Science and Technology

Presentation Paper

Co-Author(s)

LZ

Li Zhang

Huazhong University of Science and Technology
YC

Yilun Chen

Huazhong University of Science and Technology
TY

Tianxiang Yin

Huazhong University of Science and Technology
LL

Lei Lin

Huazhong University of Science and Technology

High-performance gate drive power supply (GDPS) is the key component to guarantee the reliable and safe operation of the gate driver for power semiconductor devices. To meet the requirement of suppressing the common-mode interference (CMI), the main challenge of designing GDPS for high-voltage SiC MOSFET is the realization of low interwinding capacitance. To solve this problem, design considerations, including winding layout design, transformer geometric parameters selection, and printed circuit board (PCB) stack-up design, are proposed. Based on these discussions, a complete design procedure is proposed for designing PCB transformers with low interwinding capacitance. Finally, an optimized PCB transformer, with ultra-low interwinding capacitance of 0.86pF, is fabricated in the lab to verify the feasibility of the proposed work.