T04.2 - Modeling and Characterization of Current and Future 1.2 kV Wide Bandgap Semiconductor-Based MOSFETs

Tuesday, March 18, 2025

8:50 AM – 9:10 AM ET

Location: Level Three, A312

Technical Lecture Presenter(s)

Raghav Khanna

University of Toledo
University of Toledo

Presentation Paper

Co-Author(s)

SG

Sushanta Gautam

The University of Toledo
Samuel K. Atwimah

University of Toledo
AS

Austin Michael Szczublewski

The University of Toledo
WC

William Collings

University of Toledo
TN

Tolen Michael Nelson

The University of Toledo
DG

Daniel Georgiev

University of Toledo
KH

Karl Hobart

U.S. Naval Research Laboratory
AK

Andrew Koehler

U.S. Naval Research Laboratory
AF

Aidan Patrick Fox

University of Toledo

This paper presents the design and simulation of a 1.2 kV GaN based MOSFET. Experimental Double Pulse Tests are performed on similarly-rated commercially available Si and SiC MOSFETs. An empirically validated circuit simulation model of the test-stand is then used to compare the switching performance of the theoretical GaN MOSFET with that of the Si and SiC MOSFETs.