In this work, we demonstrate industry’s first, true > 1.25kV -rated lateral GaN HEMT with state of the art switching and transient overvoltage capability suitable for automotive and industrial applications. Based on the PowiGaN™ technology platform of Power Integrations lateral GaN HEMTs with reliable switching performance > 1.25kV with stable RDSON has been demonstrated for the first time in this work. Further, reliability qualification data through1000Hrs of HTRB, THBT and DHTOL stress tests is presented demonstrating the field readiness of this state of art high voltage (S.H.V.) GaN HEMT. Performance of this high voltage GaN HEMT in a power conversion application was evaluated in a 60W isolated flyback power supply and results comparable to an equivalent SiC power switch were observed for key performance metrics (efficiency, thermals) under a wide range of input and load conditions.Our work demonstrates the potential of S.H.V. lateral GaN HEMT as a cost-effective alternative to SiC in high voltage applications.
