T08.1 - 7.2 kW GaN-Based DAB Converter with 37 kW/L Power Density and High Efficiency

Tuesday, March 18, 2025

8:30 AM – 8:50 AM ET

Location: Level Three, A314

Technical Lecture Presenter(s)

Jaksa Rubinic

Infineon Technologies Canada Inc

Presentation Paper

Co-Author(s)

Esmaeil Jalalabadi (he/him/his)

Carleton University
Yang Jiao, PhD

Infineon Technologies AG
LL

Lucas Lu

Infineon Technologies Canada Inc
XW

Xiaoyu Wang

Carleton University, Dept. of Electronics.

This paper presents a GaN-based high power density and isolated DC-DC converter with dual active bridge topology for DC/DC stage of a bidirectional 400V EV on board charger (OBC). Gallium Nitride (GaN) technology in top side cooled package is employed to achieve higher switching frequency with more compact passive components solutions. The paper introduces the design process for the DAB circuit with wide range output, as well as a high frequency planar transformer with 125 kW/L power density. System level loss breakdown and circuit protection scheme and implementation are also provided. The 7.2kW DAB prototype has been implemented and tested in constant voltage (CV) mode, proving exceptional power density of 37 kW/L with above 98% calculated peak efficiency.