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Technical Lecture

Device and Component Modeling

T07.1 - Turn-On Transient Modeling of 10 kV SiC MOSFET Half-Bridge Power Module in LTspice

Tuesday, March 18, 2025
8:30 AM – 8:50 AM ET
Location: Level Three, A316
Medium-voltage SiC MOSFETs (> 3.3 kV) feature high breakdown voltage and fast switching speed. During the 10 kV SiC MOSFET switching transitions, the device voltage swings from 0 V to 6000 V within only hundreds of nanoseconds. In this paper, an improved device modeling approach is proposed to describe this turn-on switching event, with considerations for the short-channel effect, threshold voltage hysteresis, and soft-transient characteristics. A custom-packaged power module in a half-bridge configuration, where each switch position contains a single 10 kV SiC MOSFET die (QPM3-10000-0300), is modeled and simulated in LTspice as the case study. Compared with the double pulse test experimental waveforms at several operating points, the proposed simulation model provides more accurate dv/dt and di/dt behavior compared to the traditional model.