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Technical Lecture

GaN and SiC Devices and Modules

T18.3 - Guarding-Based C-V Characterization of 10 kV SiC MOSFET in Half-Bridge Module Configuration

Wednesday, March 19, 2025
2:10 PM – 2:30 PM ET
Location: Level Three, A302
This paper introduces the guarding technique that excludes effects from module packaging to measure the capacitance-voltage (C - V) characteristics of the 10 kV SiC MOSFET. The curve tracer measurement circuit analysis and the principle of using the guarding technique to shield measured capacitance are introduced in detail. The accuracy and feasibility of guarding method have been verified by the comparison between the analytic method and the guarding method.