Solid-State Circuit Breakers (SSCBs) use a power semiconductor device to break the short circuit current and hence offer ultra-fast response time compared to mechanical breakers. However, a reliable and low loss bidirectional power semiconductor switch is essential for commercial viability of SSCB. This article provides an overview of a novel solid-state circuit breaker design using B-TRAN™ discrete device. The paper describes design considerations like B-TRAN™ cascode switching circuit setup, driver design, peak current capability of the device and layout optimization. The impact of these parameters on switch performance is analyzed. Then system level design considerations such as voltage clamping methods and overcurrent detection techniques are discussed. Test results for 400V, 200A breaking current are also presented. To conclude, the paper provides a useful framework to develop breaker designs using B-TRAN™ and how it can be compared with other power semiconductor switch technologies.