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Technical Dialogue

GaN and SiC Devices and Modules

D07.4 - Mitigating Gate Voltage Oscillation in Parallel SiC Power Modules for xEV

Thursday, March 20, 2025
11:30 AM – 1:30 PM ET
Location: Level One, Hall A3
Global vehicle electrification is accelerating to combat global warming. Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are increasingly used in electric vehicle inverters for their low power loss at fast switching speeds. However, these fast switching speeds can lead to gate voltage oscillations across paralleled SiC chips, potentially leading to failures such as gate drive malfunction and gate oxide breakdown. This paper addresses the oscillation caused by source voltage fluctuations and unbalanced gate drive circuit characteristics. We propose several methods to mitigate these issues. These methods include the addition of a multifunctional silicon chip within the power module to minimize the internal stray inductance, as well as a symmetrical module structure which equalizes stray inductance between modules.