GaN power devices are popular for VHF power conversion due to their favorable features such as small capacitances, low threshold voltages, and compact size. Here, we present the design of a class-Φ2 power converter that uses a GaN switching device, analyzing its performance delivering 10 W at 50 MHz. We conducted a comparative study between two different gate drive topologies for this converter: a conventional gate driver IC and a resonant gate drive topology. The conventional implementation achieves a total efficiency of 78.7%, while the resonant topology reaches 84.1%, demonstrating the importance of minimizing gating losses to design high efficiency VHF converters.
