T35.3 - Real-Time IGBT Module Ageing Characterization Through Temperature Monitoring

Thursday, March 20, 2025

10:50 AM – 11:10 AM ET

Location: Level Three, A315

Technical Lecture Presenter(s)

Quirc Perez-Farre

UPC , Universitat Politecnica de Catalunya

Presentation Paper

Co-Author(s)

LG

Luis F. Gomez-Rivera

MCIA Research Center, Electrical Engineering Department, Universitat Politecnica de Catalunya
CL

Carlos Lopez-Torres

UPC and SEAT S.A.
KD

Kai Dannehl

SEAT S.A.
AG

Antoni Garcia-Espinoza

MCIA Research Center, Electrical Engineering Department, Universitat Politecnica de Catalunya
AP

Alejandro Paredes-Camacho

MCIA Research Center, Electrical Engineering Department, Universitat Politecnica de Catalunya

This paper introduces a novel method for monitoring the ageing of Si insulated-gate bipolar transistors (IGBT) in real-time based on component temperature measurements. The method is based on simulating losses and the thermal behaviour models of the component in different predefined ageing states. These simulations define expected thermal indicator values for contemplated ageing conditions and, in addition, establish a correlation between thermal indicators and the component ageing state expressed on conventional indicators, such as VCE-ON and RTH-JC. This innovative method allows the simultaneous monitoring of several ageing mechanisms and opens the door for studying their dynamics during the process. To validate the potential of this method, this manuscript presents experimental real-time measurement results, marking a significant advancement in the field of IGBT ageing monitoring.