Active gate drivers for wide-bandgap devices are designed to reduce current overshoot and parasitic ringing caused by high dv/dt and di/dt transients while enabling high switching speeds. Current implementations of active gate drivers use the Miller plateau of the SiC MOSFET as a reference point for their operating parameters. However, most implementations do not account for shifts in the Miller plateau due to the ambient temperature, load current, or manufacturing tolerances. This paper presents a self-driving 3-Level Active Gate Driver (3L-AGD) network that responds to changes in the gate-source voltage without a feedback loop to control active components or a look-up table. The temperature dependence and the operating parameters of the proposed 3L-AGD network are investigated. Experimental results confirm that the proposed 3L-AGD network results in lower turn-on losses for varying operating parameters and is temperature independent.
