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Technical Dialogue

Power Modules / High Density Design

D11.7 - Improvement in Short-Circuit Robustness of SiC-MOSFETs based Power Modules using Two-Level Turn-On (2LTO)

Thursday, March 20, 2025
11:30 AM – 1:30 PM ET
Location: Level One, Hall A3
One of the challenges in design of power modules is to have an increased robustness in failure modes and a good performance during normal operation. The state-of-the-art methods to increase the short-circuit (SC) robustness include changes in the design of a power semiconductor, a fixed decrease of on-state gate-source voltage and modifications in a module layout. However, increasing the SC robustness of a power module usually results in decreased performance. This paper presents the use of a two-level turn-on (2LTO) method using an intelligent current-source gate driver (CSGD) to increase SC robustness of a SiC-MOSFET based power module (PM) without compromising the switching performance. The measurement results presented validate the 2LTO method.