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Technical Dialogue

GaN and SiC Devices and Modules

D07.10 - Nonlinear Output Capacitance of Bidirectional Gallium Nitride Power Switches

Thursday, March 20, 2025
11:30 AM – 1:30 PM ET
Location: Level One, Hall A3
In this work, the characterization of the non-linear output capacitance of bidirectional GaN transistors is presented for the first time. An experimental characterization in an Unclamped Inductive Switching Circuit of the nonlinear output characterization of a discrete bidirectional GaN transistor consisting of two 650 V anti-serial unidirectional GaN transistors in common-drain configuration is shown. Beside the non-linear output capacitance evaluation, which shows in increase of 1.8 µJ at 600 V to the unidirectional GaN Transistor, the switching behavior including the resonance voltages are investigated. Furthermore, an origin of the losses will be given, which can be used to improve the modeling of bidirectional GaN transistors. Thus, a better understanding for the switched operation of a bidirectional switch is gained.