This session will delve into the evolving dynamics between Silicon Carbide (SiC) and Gallium Nitride (GaN), two transformative wide bandgap technologies in power conversion. The growing overlap in their applications as GaN moves to higher voltage ranges will be the key point of discussion. We will discuss important and contentious issues, such as determining which technology offers superior figures of merit, reliability, and cost-effectiveness. We will also address critical factors such as the differences in substrate materials and manufacturing complexities, which significantly influence performance, scalability, and cost. During this session, we will examine various points to uncover the challenges and opportunities for SiC and GaN in sectors like renewable energy, industrial applications, and automotive, and how these factors will shape the future of power electronics.
