The industry standard LV100 package is now available with Unifull™ technology (SBD-Embedded SiC MOSFETs), achieving 60% lower switching loss compared to the 1st Generation 3.3 kV full-SiC module. Unifull™ also ensures high reliability by preventing bipolar degradation. We have introduced a novel structure, the bipolar mode activation (BMA) cell, to enhance surge current capability, achieving a similar level to body-diode-operated SiC-MOSFET modules. Continuous current and repetitive surge tests confirm the robustness to bipolar degradation of Unifull™ chips. Additionally, our module exhibits excellent moisture resistance according to the High Voltage High Humidity High Temperature Reverse Bias (HV-H3TRB) test.
The LV100 lineup also is being expanded with: - 8th generation IGBTs implementing a Split-Dummy-Active (SDA) gate structure to realize current ratings up to 1800A at 1200V. - 2.5kV IGBTs and SiC MOSFETs optimized for renewable energy and energy storage applications - SoLid Cover+ (SLC+) packaging which includes Al-alloy wire bonds for significant improvements of power cycling lifetime
