In recent years, SiC power devices have become a game changer in advanced power electronics for electric vehicles and industrial power systems. Leveraging over 20 years of R&D history and a vertically integrated production system, ROHM is in the final phase of development for its 5th Generation SiC MOSFETs, featuring 30% reduction in high-temperature Rds_on, improved productivity with 8-inch wafer process and other benefits. In parallel, novel discrete and power module packages are available for SiC devices to support high voltage ratings, enhanced reliability, system downsizing and easy assembly, enabling power converter design with higher levels of power density and dependability.
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