In recent years, improving power conversion efficiency and reducing size have become important social issues that require further advancements in the power device sector. As GaN devices generally provide higher switching characteristics and lower ON resistance than silicon devices, they are expected to contribute to lower power consumption of various power supplies and greater miniaturization of peripheral components. Along with mass-producing industry-leading SiC devices and feature-rich silicon devices, ROHM develops automotive grade 650V GaN HEMTs featuring market-leading performance that contributes to higher efficiency and smaller size in onboard charger applications.
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