Yiyang Yan, MA

HuaZhong University of Science and Technology

An improved model is proposed to demonstrate the effect of parasitic inductance and temperature on switching behavior of SiCMOSFET to offer a reference on power module design. Compared to the conventional analytical model, both the nonlinearity trans-conductance and parasitic capacitance are considered in this model using the numerical calculation method suitable for data processing. Dynamic testing based on DBC and bare die with adjustable parasitic inductance and temperature is designed and processed.

Presentation(s):

• D07.2 - A Dynamic Current Sharing Method using Novel Clip Considering Mutual Inductance Coupling

  Thursday, March 20, 2025
  11:30 AM – 1:30 PM ET

• D08.8 - Optimized Integrated EMI Filter Design in SiC Power Modules with Terminal Inductor for Better High-Frequency EMI Suppression

  Thursday, March 20, 2025
  11:30 AM – 1:30 PM ET