Thomas Aichinger

Infineon

Dr. Thomas Aichinger has received his Ph.D. degree in electrical engineering from the technical university of Vienna in 2010. In 2011 and 2012 he was a Postdoctoral researcher at Penn State University, PA, USA. Since 2012 he is in the SiC MOSFET technology development team of Infineon Technologies. He has contributed to more than 80 scientific publications including journal articles, conference papers and book chapters. He has been serving in the technical committee of IRPS and WiPDa and is currently serving as task group co-chair within a JEDEC sub-committee focusing on SiC Power Electronic Conversion Semiconductor (PECS) standards.

Presentation(s):

• D07.1 - Influence of Threshold Voltage Temperature Dependency on Junction Temperature Imbalance in Paralleled SiC MOSFETs

  Thursday, March 20, 2025
  11:30 AM – 1:30 PM ET