Presentation Description: Silicon Carbide (SiC) power devices have now received wide use in EV chargers, solar inverters, energy storage systems, and server and data center power supplies. In high-power high-current applications, oftentimes two or more switches are paralleled. Current sharing among these parallel switches and reliable operation is of great concern. This work has studied the effect of PCB layout and key parameters such as on-state resistance (RDS_ON) and threshold voltage (VTH) on the current sharing among paralleled switches by simulations. A passive approach for improving the current sharing during switching transients (turn-on and turn-off) is simulated. The simulations show that use of parasitic inductances or small inductors for each branch of MOSFETs in parallel can dramatically improve the current sharing during switching transients, reduce the power loss difference, and improve the thermal performance as well.
