Presentation Description: This industry session will detail the experimental analysis on Partial Turn-On (PTO) of fast-switching Silicon Carbide (SiC) MOSFETs and provide guidelines for optimizing the gate driver to minimize the risks associated with crosstalk. Attendees will gain insights on accurate detection and prevention of partial turn-on. Previous research initiatives have focused solely on the gate voltage transient levels without demonstrating the impact on system performance. By presenting improved test platform and measurements, the talk aims to deepen the understanding of the PTO phenomena and share insights on optimizing PTO-mitigation components for improved device efficiency in industrial converter designs. Detailed analysis related to dv/dt rate on the device, circuit design and operating conditions will be discussed. The results in terms of switching energy and magnitude of gate-source voltage spike will be presented.
