Presentation Description: For industrial applications requiring high input voltages, silicon carbide (SiC) switches have traditionally been the go-to choice, especially for voltages up to 1000 V where a 1700 V SiC device is typically employed. However, the high-voltage GaN technology offers new possibilities for higher efficiency and improved performance typical with WBG solutions while eliminating the high cost traditionally associated with silicon carbide switches. This proposal focuses on designing a single-stage flyback power supply featuring dual outputs with a wide input voltage range, utilizing the groundbreaking GaN switch. This switch also incorporates zero voltage switching (ZVS), further enhancing power supply performance.
