Quantifying the reverse recovery characteristics of SiC MOSFETs is necessary for generating device datasheets and loss models. However, the existing methods for calculating reverse recovery are based on standards developed for silicon IGBTs do not provide consistent and accurate reverse recovery calculations for SiC MOSFETs. This presents a major challenge to semiconductor manufacturers applying automated processing to measured data. As such, new methods for calculating reverse recovery that are both consistent and provide similar estimations to existing methods are needed. This paper analyzes several calculation methods and applies them to a large empirical dataset to determine their suitability for standardization. It is found that slope extrapolation techniques are the most effective method for calculating reverse recovery.
