Accurately modelling of temperature dependent two-dimensional electron gas (2DEG) is very crucial in applied power electronics, given its critical role in High Electron Mobility Transistor (HEMT) characteristics. In view of this, the temperature dependency of 2 DEG has been analyzed and modelled for the temperature range from 300 to 500K. Utilizing the doping concentration of 1 × 10^18 𝑐𝑚^-3 and Al mole fraction of 0.2. This model will integrate the effects of sub band energy variations, polarization changes, and material property adjustment due to temperature change. The goal is to provide a robust analytical framework that can predict device behavior accurately across a spectrum of operational temperature conditions. This anticipated model will facilitate the development of power electronics that are more reliable and efficient, capable of operating effectively in diverse and demanding environments.
