SuperGrid Institute
Besar Asllani, Semiconductor Solution Leader at SuperGrid Institute. Dr. Asllani obtained his engineering diploma and PhD degree at INSA de Lyon in 2013 and 2016 respectively. From 2013 to 2018 he was involved in WBG semiconductor characterization, modelling and robustness/reliability activities Ampère Lab in Lyon. In 2018 he was an invited research fellow at Power Electronics and Machines Center at Nottingham University where he continued his research on SiC MOSFET gate oxide reliability. He joined SuperGrid Institute in 2019 where he pursues research activities on robustness/reliability and series association of SiC MOSFETS for power electronics. He is currently leading projects related to SiC MOSFET reliability and Medium Voltage Direct Current converter design.
Thursday, March 20, 2025
11:30 AM – 1:30 PM ET