Matthew Porter

Center for Power Electroncis Systems, Virginia Tech

Presentation(s):

• T18.1 - First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures Down to 100 mK

  Wednesday, March 19, 2025
  1:30 PM – 1:50 PM ET

• T29.1 - Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching Speed and Low Optical Power

  Thursday, March 20, 2025
  8:00 AM – 8:20 AM ET