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Qian, Ting
Tongji University
D03.3 - A High-Efficiency Switching Oscillation Suppression Strategy based on Damped Oscillation for Synchronous DC-DC Converter
Location: Level One, Hall A3
Ting Qian
Favorite
Qian, Yijie
Southeast University
IS21 - Energy Management, Storage, and Electrification from Microwatts to Megawatts
Location: Level Four, A410
Yijie Qian
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Qian, Yijie
Southeast University
T09.8 - An Ultra-Fast Control Strategy and Pre-Current-Balancing Measures Prepared for Rapid Transients in Constant On-Time Controllers
Location: Level Three, A302
Yijie Qian
Favorite
Qiblawey, Yazan
Iberdrola Innovation Middle East
D21.10 - LSTM-Based Sub-Synchronous Oscillation Detection Scheme for Type 4 Wind Farm Interfaced with Weak AC Grid
Location: Level One, Hall A3
Yazan Qiblawey
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Qi, Nianzun
Aalborg University
T07.1 - Turn-On Transient Modeling of 10 kV SiC MOSFET Half-Bridge Power Module in LTspice
Location: Level Three, A316
Nianzun Qi
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T18.3 - Guarding-Based C-V Characterization of 10 kV SiC MOSFET in Half-Bridge Module Configuration
Location: Level Three, A302
Nianzun Qi
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Qin, Yuan
Center for Power Electroncis Systems, Virginia Tech
T29.1 - Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching Speed and Low Optical Power
Location: Level Three, A313
Yuan Qin
Favorite
Qin, Zian
Delft University of Technology
T11.2 - Revisit Active Power Oscillation in Multi-Virtual Synchronous Generators Grid
Location: Level Three, A315
Zian Qin
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Qiu, Tian
Rensselaer Polytechnic Institute
D08.4 - Comparison of Static Characteristics in GaN HEMTs Across 50K to 400K Considering Diverse Techniques and Statistical Variation
Location: Level One, Hall A3
Tian Qiu
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T18.4 - Automated Characterization Platform for Comprehensive Dynamic Rdson Assessment of GaN HEMTs from 50 K to 400 K
Location: Level Three, A302
Tian Qiu
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T04 - GaN Power Devices
Location: Level Three, A312
Tian Qiu
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Qiu, Weijin
John Deere
D25 - Wireless Power Transfer II
Location: Level One, Hall A3
Weijin Qiu
Favorite
T14 - Wireless Power Transfer: Design & Control
Location: Level Three, A312
Weijin Qiu
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Qi, Vivian
TI
IS08.3 - Integrated advanced gate driver protection and safety features for high power systems
Location: Level Four, A411
Vivian Qi
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IS08.5 - Performance comparison of a pre-driver with external FETs vs an integrated high-current FET driver for high power applications
Location: Level Four, A411
Vivian Qi
Favorite
Queiroz, Samuel
Eindhoven University of Technology
T23.5 - Comparative Evaluation of a Multilevel LLC Resonant Converter for a Modular DC/DC Stage in a Electrolyzer Power Supply
Location: Level Three, A314
Samuel Queiroz
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T23.6 - Cost-Effectiveness Assessment of SiC MOSFET and Si IGBT Semiconductors in a Three-Level Resonant Converter for Solid-State Transformer
Location: Level Three, A314
Samuel Queiroz
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Quenette, Vincent
X-FAB
T38.5 - A New Gate Charge De-Embedding Method for Accurate On-Wafer Characterization of HV MOSFET Devices
Location: Level Three, A313
Vincent Quenette
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Quinn, Conor
Advanced Energy Industries
IS20 - The Need for CyberSecurity in Power Supplies, Converters and Systems
Location: Level Four, A411
Conor Quinn
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Quismundo, Juan Paolo
Power Integrations
IS03.5 - Meeting Standby Power Regulations in Motor Drive Applications
Location: Level Four, A410
Juan Paolo Quismundo
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Qu, Shusun
onsemi
IS28.3 - SiC JFET for Linear Mode Applications: Pre-Charge, Current Limiting and Active Discharge
Location: Level Four, A404/A405
Shusun Qu
Favorite
IS28.4 - Toward a Practical Semiconductor Circuit Breaker with SiC JFETs
Location: Level Four, A404/A405
Shusun Qu
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