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Technical Lecture

GaN and SiC Devices and Modules

T18.1 - First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures Down to 100 mK

Wednesday, March 19, 2025
1:30 PM – 1:50 PM ET
Location: Level Three, A302
Electrical energy conversion at deep cryogenic temperatures (T < 4.2 K) is desirable for space, quantum, and astronomical applications. However, the functionality of power semiconductors within this temperature range remains uncertain. For the first time, we evaluate the static and dynamic performances of discrete GaN HEMT and GaN power IC at temperatures as low as 10 mK. This investigation is made possible by utilizing a dilution refrigerator connected to a custom circuit setup that integrates double-pulse testing and dynamic on-resistance (RON) measurements. Key findings at temperatures below 1 K include: 1) GaN HEMTs maintain normally-off operation and high breakdown voltage; 2) discrete GaN HEMT and GaN power IC are both capable of hard switching under gate signals; and 3) the dynamic RON are approximately ~4.5 times lower than at 295 K. The many firsts reported in this work open the door for developing cryogenic power electronics at temperatures below the current boundaries.