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Technical Dialogue

GaN and SiC Devices and Modules

D07.7 - Leakage Current Detection Scheme for Aging Test of 10kV SiC MOSFET Power Module

Thursday, March 20, 2025
11:30 AM – 1:30 PM ET
Location: Level One, Hall A3
Existing aging experiments primarily focus on low-voltage MOSFETs and medium-voltage (MV) Insulated Gate Bipolar Transistors (IGBTs), while lacking of experimental data for MV SiC MOSFETs. Due to their device characteristics, MV SiC MOSFETs exhibit significantly lower leakage currents compared to IGBTs, and the interference caused by MV environments makes traditional monitoring methods unsuitable. This paper designs a high-precision leakage current monitoring circuit capable of covering a range from nA to μA and sets up a MV High-Temperature Reverse Bias (HTRB) testing platform for the aging testing of SiC MOSFET power modules. Finally, HTRB test is conducted on 6.5kV and 10kV SiC MOSFET power modules, with real-time monitoring of leakage current variations, and successfully yields relevant aging characteristics.