D07.6 - Modeling of Switching Transients for Frequency-Domain CM EMI Analysis in Double Sided Cooling Power Modules

Thursday, March 20, 2025

11:30 AM – 1:30 PM ET

Location: Level One, Hall A3

Technical Dialogue Presenter(s)

Sijia Liu

School of Electrical and Electronic Engineering Huazhong University of Science and Technology

Presentation Paper

Co-Author(s)

HZ

Heng Zhang

School of Electrical and Electronic Engineering Huazhong University of Science and Technology
Yifan Zhang (she/her/hers)

Huazhong University of Science and Technology
ZZ

Zexiang Zheng

Huazhong University of Science and Technology
JL

Jiaxin Liu

Huazhong University of Science and Technology
CC

Cai Chen

HuaZhong University of Science and Technology
YK

Yong Kang

HuaZhong University of Science and Technology
JL

Jianwei Lv

Huazhong University of Science and Technology
LY

Liu Yang

State Key Laboratory of HVDC
YZ

Yuebin Zhou

State Key Laboratory of HVDC
DW

Daming Wang

State Key Laboratory of HVDC
SZ

Shuang Zhao

Hefei University of Technology

This paper provides detailed models and analysis of the impact of parasitic capacitances on CM EMI performance in the double sided cooling (DSC) power modules. The effect of parasitic capacitances on CM EMI in DSC modules are analyzed first. Then, small-signal models for different switching stages are established to better understand the mechanisms from the perspective of interference source. Finally, based on the above analysis, several design guidance of the DSC module is given for better CM EMI performance. Moreover, an optimized DSC module integrated with a capacitor is proposed. Simulation results show that the optimized module can achieve a maximum reduction of 13 dBμV in CM EMI.