D08.5 - Compact Model of β-Ga₂O₃ Schottky Barrier Diode

Thursday, March 20, 2025

11:30 AM – 1:30 PM ET

Location: Level One, Hall A3

Technical Dialogue Presenter(s)

Abu Shahir Md Khalid Hasan, MS

University of Arkansas

Co-Author(s)

MR

Mohammad Dehan Rahman (he/him/his)

University of Arkansas
TA

Tanzila Akter

University of Arkansas
MI

Md Majharul Islam

University of Arkansas
MH

Md Maksudul Hossain

University of Arkansas
Xiaoqing Song

University of Arkansas
Alan Mantooth, PhD

University of Arkansas

Gallium oxide is emerging as a leading ultra-wide bandgap material for future applications. Metals with large work functions have been used with β-Ga2O3 (the most stable polytype of gallium oxide) to form the Schottky barrier diode. In this work, a β-Ga2O3 Schottky barrier diode has been characterized using the Keysight B1505A curve tracer. The IV characteristics of the β-Ga2O3 die are measured with four probe measurements. A diode spice model for β-Ga2O3 Schottky barrier diode has been developed based on diffusion mechanism and charge control continuity equation. A series resistance is also included in the diode spice model. The model has shown good agreement on both linear and logarithmic scale.