T19 - Gate Drive Circuits I

Technical Lecture Session Chair(s)

• ZS

  Zahra Saadatizadeh, PhD

  Mississippi State University
• 

  Davide Giacomini (he/him/his)

  Infineon Technologies AG

Student Session Assistant(s)

• 

  Divyanshu Bansal (he/him/his)

  Indian Institute of Science

Presentations:

• 1:30 PM – 1:50 PM ET

  Innovative Gate Driver Structure Achieving Low Time Skew Across Isolation Barrier for Parallel Connected SiC Modules
  

  Technical Lecture Presenter: Louison Gouy (he/him/his) – IETR, Nantes Université

  Co-Author: Anne-Sophie Descamps – IETR, Nantes Université

  Co-Author: Nicolas Ginot – IETR, Nantes Université

  Co-Author: Christophe Batard – IETR, Nantes Université
• 1:50 PM – 2:10 PM ET

  Fully Integrated Closed-Loop Active Gate Driver IC with Real-Time Control of Gate Current Change Timing by Gate Current Sensing
  

  Technical Lecture Presenter: Yaogan Liang, PhD (he/him/his) – The University of Tokyo

  Co-Author: Katsuhiro Hata (he/him/his) – Shibaura Institute of Technology

  Co-Author: Makoto Takamiya – The University of Tokyo
• 2:10 PM – 2:30 PM ET

  Analyze and Design of Digitally Load Current Modulated Active Gate Driver for GaN HEMTs based Buck DC-DC
  

  Technical Lecture Presenter: Wentao Liu (he/him/his) – Fudan University

  Co-Author: Taotao Wu – Fudan University

  Co-Author: Xiaochuan Peng – Fudan University

  Co-Author: Hao Min – Fudan University

  Co-Author: Zhina Lian – Fudan University
• 2:30 PM – 2:50 PM ET

  Impact of Real-Time Variable Gate-Drive Strength on Drive Cycle Efficiency in SiC Inverter-Fed PMSM Traction Drives
  

  Technical Lecture Presenter: Matteo Pizzuto (he/him/his) – University of Windsor

  Co-Author: Aiswarya Balamurali, PhD – Schaeffler

  Co-Author: Aniket Anand – Schaeffler

  Co-Author: Narayan Kar – University of Windsor
• 2:50 PM – 3:10 PM ET

  Demonstration of Efficiency Increase of 350 V-to-13.3 V Isolated DC-DC Converters for Electric Vehicles by Active Gate Driving
  

  Technical Lecture Presenter: Yohei Sukita – The University of Tokyo

  Co-Author: Katsuhiro Hata (he/him/his) – Shibaura Institute of Technology

  Co-Author: Hiroki Kondo – Toyota Industries Corporation

  Co-Author: Kenichi Watanabe (he/him/his) – Toyota Industries Corporation

  Co-Author: Kenichi Nagayoshi, ME (he/him/his) – Toyota Industries Corporation

  Co-Author: Makoto Takamiya – The University of Tokyo
• 3:40 PM – 4:00 PM ET

  A Multi-Level Active Gate Driver for Achieving Thermal Balance in Parallel Connected Power MOSFETs
  

  Technical Lecture Presenter: Jingyuan Liang – University of Toronto

  Co-Author: Lingwei Sun – University of Toronto

  Co-Author: Wen Tao Cui – University of Toronto

  Co-Author: Wai Tung Ng – University of Toronto

  Co-Author: Motomitsu Iwamoto – Fuji Electric Co. Ltd.

  Co-Author: Haruhiko Nishio – Fuji Electric Co. Ltd.
• 4:00 PM – 4:20 PM ET

  A Fast Short-Circuit Protection Method for Ohmic Gate P-GaN HEMT based on Gate Charge
  

  Technical Lecture Presenter: Keqi Song (he/him/his) – City University of Hong Kong

  Co-Author: Yue Wu – Xidian University

  Co-Author: Xi Jiang – Xidian University

  Co-Author: Jiahong Chen – Xidian University

  Co-Author: Yun Xu – Xidian University

  Co-Author: Jinjie Liu – Xidian University
• 4:20 PM – 4:40 PM ET

  Comparison of Ultrafast-Rise-Time Gate Drivers for Wide-Bandgap Devices in Sub-Microsecond Pulsed Power Applications
  

  Technical Lecture Presenter: Soham Roy, MSEE – The University of Texas at Austin

  Co-Author: Duy Nguyen – The University of Texas at Austin

  Co-Author: Neeraj Anantha – The University of Texas at Austin

  Co-Author: Alex Hanson – UT Austin
• 4:40 PM – 5:00 PM ET

  A Discrete Multilevel Active Gate Driver for GaN HEMTs to Optimize the Switching Behavior
  

  Technical Lecture Presenter: Celine Lawniczak – TU Dortmund

  Co-Author: Martin Pfost – Technische Universität Dortmund