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Dialogue Preview Sessions

GaN and SiC Devices and Modules

D07.3 - Application-Oriented Test Setup for Measuring Dynamic Output and Transfer Characteristics of GaN-HEMTs

Monday, March 17, 2025
12:00 PM – 1:30 PM ET
Location: Level Four, Sidney J. Marcus Auditorium Foyer
Apart from the excellent switching and conduction properties of power GaN-HEMTs, trapping effects are still an issue degrading the device’s performance. As conventional methods have been proven inadequate for device characterization with respect to trapping, new application-oriented characterization methods have been developed in recent years. In this paper, an application-oriented test setup for measuring output and transfer characteristics is presented, which extends an existing setup for the measurement of the dynamic on-resistance. Initial results indicate that there is a significant change in characteristics dependent on the applied off-state drain voltage bias. Addition- ally, several typical trapping phenomena such as the dynamic on-resistance, threshold voltage shift and current collapse were observed.