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Dialogue Preview Sessions

Ultra-Wide Bandgap Devices

D08.7 - First Demonstration of a Gallium Oxide Power Converter

Monday, March 17, 2025
12:00 PM – 1:30 PM ET
Location: Level Four, Sidney J. Marcus Auditorium Foyer
Ultra-wide bandgap (UWBG) semiconductor materials are predicted to greatly improve the performance of next-generation power electronics. Ga2O3 is a promising UWBG material due to its large critical electric field strength, readily accessible n-type doping, and the availability of native substrates. However, no power converters using only Ga2O3 devices have been demonstrated yet as the field has prioritized low periphery device work, leading to high on-resistance. In this paper, we present the first demonstration of a dc-dc converter using Ga2O3 lateral field effect transistors with large periphery. We first fabricate and package the transistors then place them into the high and low side switch of a buck converter circuit. The devices are tested at 45 V input voltage, 2.7 W output power, and the converter achieves an efficiency of over 90% under various operating conditions.