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Technical Lecture

Power Electronics Packaging

T37.4 - Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module

Thursday, March 20, 2025
11:10 AM – 11:30 AM ET
Location: Level Three, A301
The abstract introduces an alternative flip-chip design, utilizing solder ball bonding, as a replacement for the conventional wire-bonded GaN power module. A finite element analysis (FEA) model is developed to assess the junction temperature and parasitic inductance of the proposed design. The bonding strength of the module is also investigated to validate the mechanical integrity of this approach. Additionally, static characterization of the GaN HEMT die is performed to confirm the electrical viability of the proposed design.