T29.1 - Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching Speed and Low Optical Power

Thursday, March 20, 2025

8:00 AM – 8:20 AM ET

Location: Level Three, A313

Technical Lecture Presenter(s)

Qihao Song

Virginia Tech

Presentation Paper

Co-Author(s)

Xin Yang

Center for Power Electroncis Systems, Virginia Tech

Presentation
YZ

Yuhao Zhang

Virginia Polytechnic Institute and State University

Presentation
GS

Guannan Shi

Bradley Department of Electrical and Computer Engineering, Virginia Tech
LJ

Liyang Jin

Bradley Department of Electrical and Computer Engineering, Virginia Tech
YQ

Yuan Qin

Center for Power Electroncis Systems, Virginia Tech
MP

Matthew Porter

Center for Power Electroncis Systems, Virginia Tech
XJ

Xiaoting Jia

Bradley Department of Electrical and Computer Engineering, Virginia Tech
DD

Dong Dong

Virginia Polytechnic Institute and State University
LS

Linbo Shao

Bradley Department of Electrical and Computer Engineering, Virginia Tech
Che-Wei Chang (he/him/his)

Virginia Polytechnic Institute and State University

Optically-controlled high-voltage power devices hold good promise for grid and renewable energy applications by providing superior EMI immunity and reduced switching delay. This paper proposed a novel optically-controlled gate driver architecture that applies complementary optical signals to two photodiodes arranged in a totem-pole configuration. This configuration enables fast switching of power semiconductor devices using minimal optical power, as only low-power driver signals are optically modulated and device main current is not photogenerated. We employ two InGaAs PDs to drive a 3.3 kV SiC MOSFET, the highest-voltage industrial unipolar device currently available. When each PD is illuminated by 21.7 mW optical power, the SiC MOSFET achieves hard-switching at 1500V/3A, with rise and fall times of 152 ns and 214 ns, respectively. These results set new records for switching voltage, speed, and power capacity to optical power ratio in optically-controlled unipolar power switches. This general optical driver design is also applicable to the future development of integrated optics for power electronics in diverse (ultra-) wide-bandgap semiconductors.