This article presents a real-time method for detecting bond wire lift-off in SiC MOSFETs using a transmission line impedance matching approach. By temporarily introducing a discrete transmission line (DTL) into the gate driving signal and observing energy changes on specific DTL sections, source inductance changes due to bond wire issues can be indirectly monitored. The technique was tested on a 40W, 48V/24V, 100kHz buck converter without requiring any external injection signal.
.jpg "Keqi Song (he/him/his) photo")
